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|a 007100887x
|c 329
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|a DLC
|c MUT
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|a TK7871.86
|b R69B54
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|a Roulston, David J.
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1 |
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|a Bipolar semiconductor devices
|b /
|c David J. Roulston
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260 |
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|a New York :
|b McGraw-Hill,
|c 1990
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300 |
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|a xxi, 422 p. :
|b graphs ;
|c 23 cm.
|
440 |
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0 |
|a McGraw-Hill electronic engineering series
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500 |
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|a c.3 เป็นปกแข็ง (1769 บาท), Includes index.
|
650 |
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0 |
|a Diodes, Semiconductor --
|x Design and construction.
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991 |
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|a MONOGRAPHS
|b 6
|c 2018-11-06 23:45:17
|d 2022-03-31 09:31:31
|e mut
|f n
|g null
|h n
|i a
|j m
|k
|l a
|m
|n a
|o
|p b
|q
|r nyu
|s eng
|t 1990
|v Bipolar semiconductor devices /
|