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GaAs high-speed devices : physics, technology, and circuit applications / C. Y. Chang, Francis Kai

Main Author: Chang, C. Y.
Other Authors: Kai, Francis
Format: MONOGRAPHS
Language: English
Published: New York : John Wiley, 1994
Subjects: Gallium arsenide semiconductors.
Integrated circuits.
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020 |a 047185641x  |c 2549 
040 |a DLC  |c MUT 
050 4 |a TK7871.15  |b C43G33 
100 1 |a Chang, C. Y. 
245 1 0 |a GaAs high-speed devices : physics, technology, and circuit applications  |b /  |c C. Y. Chang, Francis Kai 
260 |a New York :  |b John Wiley,  |c 1994 
300 |a xiv, 612 p. :  |b illus., graphs ;  |c 26 cm. 
500 |a Includes index. 
650 0 |a Gallium arsenide semiconductors. 
650 0 |a Integrated circuits. 
700 1 |a Kai, Francis 
991 |a MONOGRAPHS  |b 3  |c 2018-11-06 21:43:52  |d 2021-10-27 14:39:14  |e mut  |f n  |g null  |h n  |i a  |j m  |k    |l a  |m    |n a  |o    |p b  |q    |r nyu  |s eng  |t 1994   |v GaAs high-speed devices : physics, technology, and circuit applications / 

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