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Hot carrier design considerations for MOS devices and circuits / edited by Cheng T. Wang

Other Authors: Wang, Cheng T.
Format: MONOGRAPHS
Language: English
Published: New York : Van Nostrand Reinhold, 1992
Subjects: Metal oxide semiconductors
Metal oxide semiconductors
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003 Th-MUT
008 181106s9999 xx 000 0 eng d
020 |a 0442001215 
040 |a DLC  |c MUT 
050 4 |a TK7871.99.M44  |b H683 
245 1 0 |a Hot carrier design considerations for MOS devices and circuits  |b /  |c edited by Cheng T. Wang 
260 |a New York :  |b Van Nostrand Reinhold,  |c 1992 
300 |a xiii, 334 p. :  |b illus. ;  |c 23 cm. 
504 |a Includes bibliographical references and index. 
650 0 |a Metal oxide semiconductors 
650 0 |a Metal oxide semiconductors 
700 1 |a Wang, Cheng T. 
991 |a MONOGRAPHS  |b 5  |c 2018-11-07 05:45:41  |d 2021-10-27 14:39:14  |e mut  |f n  |g null  |h n  |i a  |j m  |k    |l a  |m    |n a  |o    |p b  |q    |r nyu  |s eng  |t 1992   |v Hot carrier design considerations for MOS devices and circuits / 

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