Hot carrier design considerations for MOS devices and circuits / edited by Cheng T. Wang
Other Authors: | Wang, Cheng T. |
---|---|
Format: | MONOGRAPHS |
Language: | English |
Published: |
New York : Van Nostrand Reinhold, 1992 |
Subjects: |
Metal oxide semiconductors
Metal oxide semiconductors |
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001 | 0018190 | ||
003 | Th-MUT | ||
008 | 181106s9999 xx 000 0 eng d | ||
020 | |a 0442001215 | ||
040 | |a DLC |c MUT | ||
050 | 4 | |a TK7871.99.M44 |b H683 | |
245 | 1 | 0 | |a Hot carrier design considerations for MOS devices and circuits |b / |c edited by Cheng T. Wang |
260 | |a New York : |b Van Nostrand Reinhold, |c 1992 | ||
300 | |a xiii, 334 p. : |b illus. ; |c 23 cm. | ||
504 | |a Includes bibliographical references and index. | ||
650 | 0 | |a Metal oxide semiconductors | |
650 | 0 | |a Metal oxide semiconductors | |
700 | 1 | |a Wang, Cheng T. | |
991 | |a MONOGRAPHS |b 5 |c 2018-11-07 05:45:41 |d 2021-10-27 14:39:14 |e mut |f n |g null |h n |i a |j m |k |l a |m |n a |o |p b |q |r nyu |s eng |t 1992 |v Hot carrier design considerations for MOS devices and circuits / |