Operation and modeling of the MOS transistor / Yannis P. Tsividis
| Main Author: | Tsividis, Yannis P. |
|---|---|
| Format: | MONOGRAPHS |
| Language: | English |
| Published: |
New York : McGraw-Hill, 1988 |
| Series: |
McGraw-Hill electrical engineering series
|
| Subjects: |
Metal oxide semiconductor field-effect transistors --
> Mathematical models.
Metal oxide semiconductors -- > Mathematical models. Field-effect transistors -- > Mathematical models. |
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| 001 | 0011841 | ||
| 003 | Th-MUT | ||
| 008 | 181106s1988 xx 000 0 eng d | ||
| 020 | |a 007065381X | ||
| 040 | |a DLC |c MUT | ||
| 050 | 4 | |a TK7871.99.M44 |b T78O47 | |
| 100 | 1 | |a Tsividis, Yannis P. | |
| 245 | 1 | 0 | |a Operation and modeling of the MOS transistor |b / |c Yannis P. Tsividis |
| 260 | |a New York : |b McGraw-Hill, |c 1988 | ||
| 300 | |a xx, 505 p. : |b graphs ; |c 21 cm. | ||
| 440 | 0 | |a McGraw-Hill electrical engineering series | |
| 500 | |a Includes index. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors -- |x Mathematical models. | |
| 650 | 0 | |a Metal oxide semiconductors -- |x Mathematical models. | |
| 650 | 0 | |a Field-effect transistors -- |x Mathematical models. | |
| 991 | |a MONOGRAPHS |b 9 |c 2018-11-06 23:36:37 |d 2022-11-13 09:53:02 |e mut |f n |g 2018-11-06 |h n |i a |j m |k |l a |m |n a |o |p b |q |r nyu |s eng |t 1988 |v Operation and modeling of the MOS transistor / | ||