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Evaluation and optimization of mos device drain conductance modeling in the spice level 2 model / Gregory D. Anderson

Main Author: Anderson, Gregory
Format: MONOGRAPHS
Language: English
Published: Berkeley : Electronics Research Laboratory, 1984
Subjects: Metal oxide semiconductors.
Signal processing.
Transistors.
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040 |a DLC  |c MUT 
050 4 |a TK7871.99  |b A53E93 
100 1 |a Anderson, Gregory 
245 1 0 |a Evaluation and optimization of mos device drain conductance modeling in the spice level 2 model  |b /  |c Gregory D. Anderson 
260 |a Berkeley :  |b Electronics Research Laboratory,  |c 1984 
300 |a 1.v. [vairous pagings] :  |b graphs ;  |c 25 cm. 
650 0 |a Metal oxide semiconductors. 
650 0 |a Signal processing. 
650 0 |a Transistors. 
991 |a MONOGRAPHS  |b 3  |c 2018-11-06 20:03:13  |d 2021-10-27 14:39:14  |e mut  |f n  |g null  |h n  |i a  |j m  |k    |l a  |m    |n a  |o    |p b  |q    |r enk  |s eng  |t 1984   |v Evaluation and optimization of mos device drain conductance modeling in the spice level 2 model / 

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